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Title: Correlation-driven insulator-metal transition in near-ideal vanadium dioxide films

Journal Article · · Physical Review Letters
 [1];  [2];  [2];  [3];  [4];  [4];  [4];  [4];  [5];  [5];  [6];  [6];  [6];  [6];  [6];  [6];  [6];  [2];  [2];  [4]
  1. SLAC National Accelerator Lab., Menlo Park, CA (United States); Temple Univ., Philadelphia, PA (United States)
  2. IBM Almaden Research Center, San Jose, CA (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Amsterdam, Amsterdam (The Netherlands)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
  5. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction, and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO2. We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline VO2 films are preceded by the purely electronic softening of Coulomb correlations within V-V singlet dimers. This process starts 7 K (±0.3 K) below the transition temperature, as conventionally defined by electronic transport and x-ray diffraction measurements, and sets the energy scale for driving the near-room-temperature insulator-metal transition in this technologically promising material.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-76SF00515; AC02-05CH11231
OSTI ID:
1261081
Alternate ID(s):
OSTI ID: 1242439; OSTI ID: 1379238
Report Number(s):
SLAC-PUB-16591; PRLTAO; arXiv:1503.07892
Journal Information:
Physical Review Letters, Vol. 116, Issue 11; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 60 works
Citation information provided by
Web of Science

References (33)

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Cited By (14)

Nonstoichiometric Oxygen‐Dependent Microstructures and Phase Transitions in Post‐Annealed Vanadium Dioxides journal April 2019
Tailoring Vanadium Dioxide Film Orientation Using Nanosheets: a Combined Microscopy, Diffraction, Transport, and Soft X‐Ray in Transmission Study journal October 2019
Ramp-Reversal Memory and Phase-Boundary Scarring in Transition Metal Oxides journal March 2017
Interplay Between Extra Charge Injection and Lattice Evolution in VO 2 /CH 3 NH 3 PbI 3 Heterostructure journal January 2018
Nanoscale electrodynamics of strongly correlated quantum materials journal November 2016
Metamaterials based on the phase transition of VO 2 journal December 2017
Fine structure of metal–insulator transition in EuO resolved by doping engineering journal March 2018
Ultrafast response of photoexcited carriers in VO 2 at high-pressure journal August 2018
Ab initio molecular dynamics study of the structural and electronic transition in VO 2 journal August 2017
Electronic structure of metallic and insulating phases of vanadium dioxide and its oxide alloys journal September 2019
Nanoscale Phase Separation and Lattice Complexity in VO2: The Metal–Insulator Transition Investigated by XANES via Auger Electron Yield at the Vanadium L23-Edge and Resonant Photoemission journal December 2017
Electronic structure of metallic and insulating phases of vanadium dioxide and its oxide alloys journalarticle January 2019
Ultrafast THz Field Control of Electronic and Structural Interactions in Vanadium Dioxide text January 2016
Ramp Reversal Memory and Phase-Boundary Scarring in Transition Metal Oxides text January 2017

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