Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well

Kim, Yeongho; Faleev, Nikolai N.; Ban, Keun-Yong; Kim, Jun Oh; Lee, Sang Jun; Honsberg, Christiana B.

doi:10.1088/0022-3727/49/30/305102

Title: Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well

Journal Article · Thu Jul 07 00:00:00 EDT 2016 · Journal of Physics. D, Applied Physics

DOI:https://doi.org/10.1088/0022-3727/49/30/305102· OSTI ID:1260846

Kim, Yeongho; Faleev, Nikolai N.; Ban, Keun-Yong; Kim, Jun Oh; Lee, Sang Jun; Honsberg, Christiana B.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: EEC-1041895

OSTI ID:: 1260846

Journal Information:: Journal of Physics. D, Applied Physics, Journal Name: Journal of Physics. D, Applied Physics Vol. 49 Journal Issue: 30; ISSN 0022-3727

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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Cited by: 2 works

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References (28)

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