Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC

Journal Article · Thu Apr 14 00:00:00 EDT 2016 · Journal of Physics. D, Applied Physics

DOI:https://doi.org/10.1088/0022-3727/49/19/19LT01· OSTI ID:1260481

Bayu Aji, L. B. ^[1]; Wallace, J. B. ^[2]; Shao, L. ^[3]; Kucheyev, S. O. ^[1]

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1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States)
3. Texas A & M Univ., College Station, TX (United States)

Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently developed pulsed ion beam method to measure effective defect diffusion lengths in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. Results reveal a diffusion length of ~10 nm, which exhibits a weak temperature dependence, changing from 9 to 13 nm with increasing temperature. Lastly, these results have important implications for understanding and predicting radiation damage in SiC and for the development of radiation-resistant materials via interface-mediated defect reactions.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• Sponsoring Organization: USDOE
• Grant/Contract Number: AC52-07NA27344
• OSTI ID: 1260481
• Alternate ID(s): OSTI ID: 1247186
• Report Number(s): LLNL-JRNL-678147
• Journal Information: Journal of Physics. D, Applied Physics, Vol. 49, Issue 19; ISSN 0022-3727
• Publisher: IOP Publishing
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY