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This content will become publicly available on April 27, 2017

Title: Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.
 [1] ;  [2] ;  [3] ;  [1] ;  [1] ;  [3] ;  [4]
  1. The Ohio State Univ., Columbus, OH (United States)
  2. Univ. of California, Riverside, CA (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. The Ohio State Univ., Columbus, OH (United States); Univ. of California, Riverside, CA (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0022-0248; PII: S0022024816302032
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 447; Journal Issue: C; Journal ID: ISSN 0022-0248
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
36 MATERIALS SCIENCE A3. Molecular beam epitaxy; B1. Oxides; B1. Perovskites; B1. Graphene