III-nitride quantum dots for ultra-efficient solid-state lighting

Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; Tsao, Jeffrey Y.

doi:10.1002/lpor.201500332

Title: III-nitride quantum dots for ultra-efficient solid-state lighting

Journal Article · Mon May 23 00:00:00 EDT 2016 · Laser & Photonics Reviews

DOI:https://doi.org/10.1002/lpor.201500332· OSTI ID:1259487

Wierer, Jr., Jonathan J. ^[1]; Tansu, Nelson ^[1]; Fischer, Arthur J. ^[2]; Tsao, Jeffrey Y. ^[2]

Lehigh Univ., Bethlehem, PA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Abstract III‐nitride light‐emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III‐nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD‐based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD‐based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. If constructed properly, III‐nitride light‐emitting devices with QD active regions have the potential to outperform quantum well light‐emitting devices, and enable an era of ultra‐efficient solid‐state lighting. image

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1259487

Alternate ID(s):: OSTI ID: 1401676

Report Number(s):: SAND2016-4540J; 640185

Journal Information:: Laser & Photonics Reviews, Vol. 10, Issue 4; ISSN 1863-8880

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 30 works

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