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Title: Three-dimensional minority-carrier collection channels at shunt locations in silicon solar cells

Abstract

In this contribution, we demonstrate the value of using a multiscale multi-technique characterization approach to study the performance-limiting defects in multi-crystalline silicon (mc-Si) photovoltaic devices. The combination of dark lock-in thermography (DLIT) imaging, electron beam induced current imaging, and both transmission and scanning transmission electron microscopy (TEM/STEM) on the same location revealed the nanoscale origin of the optoelectronic properties of shunts visible at the device scale. Our site-specific correlative approach identified the shunt behavior to be a result of three-dimensional inversion channels around structural defects decorated with oxide precipitates. These inversion channels facilitate enhanced minority-carrier transport that results in the increased heating observed through DLIT imaging. The definitive connection between the nanoscale structure and chemistry of the type of shunt investigated here allows photovoltaic device manufacturers to immediately address the oxygen content of their mc-Si absorber material when such features are present, instead of engaging in costly characterization.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1259250
Report Number(s):
NREL/JA-5K00-63709
Journal ID: ISSN 0038-092X
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
Solar Energy
Additional Journal Information:
Journal Volume: 135; Journal ID: ISSN 0038-092X
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; multicrystalline silicon; shunts; characterization; precipitates

Citation Formats

Guthrey, Harvey, Johnston, Steve, Weiss, Dirk N., Grover, Sachit, Jones, Kim, Blosse, Alain, and Al-Jassim, Mowafak. Three-dimensional minority-carrier collection channels at shunt locations in silicon solar cells. United States: N. p., 2016. Web. doi:10.1016/j.solener.2016.05.023.
Guthrey, Harvey, Johnston, Steve, Weiss, Dirk N., Grover, Sachit, Jones, Kim, Blosse, Alain, & Al-Jassim, Mowafak. Three-dimensional minority-carrier collection channels at shunt locations in silicon solar cells. United States. https://doi.org/10.1016/j.solener.2016.05.023
Guthrey, Harvey, Johnston, Steve, Weiss, Dirk N., Grover, Sachit, Jones, Kim, Blosse, Alain, and Al-Jassim, Mowafak. 2016. "Three-dimensional minority-carrier collection channels at shunt locations in silicon solar cells". United States. https://doi.org/10.1016/j.solener.2016.05.023.
@article{osti_1259250,
title = {Three-dimensional minority-carrier collection channels at shunt locations in silicon solar cells},
author = {Guthrey, Harvey and Johnston, Steve and Weiss, Dirk N. and Grover, Sachit and Jones, Kim and Blosse, Alain and Al-Jassim, Mowafak},
abstractNote = {In this contribution, we demonstrate the value of using a multiscale multi-technique characterization approach to study the performance-limiting defects in multi-crystalline silicon (mc-Si) photovoltaic devices. The combination of dark lock-in thermography (DLIT) imaging, electron beam induced current imaging, and both transmission and scanning transmission electron microscopy (TEM/STEM) on the same location revealed the nanoscale origin of the optoelectronic properties of shunts visible at the device scale. Our site-specific correlative approach identified the shunt behavior to be a result of three-dimensional inversion channels around structural defects decorated with oxide precipitates. These inversion channels facilitate enhanced minority-carrier transport that results in the increased heating observed through DLIT imaging. The definitive connection between the nanoscale structure and chemistry of the type of shunt investigated here allows photovoltaic device manufacturers to immediately address the oxygen content of their mc-Si absorber material when such features are present, instead of engaging in costly characterization.},
doi = {10.1016/j.solener.2016.05.023},
url = {https://www.osti.gov/biblio/1259250}, journal = {Solar Energy},
issn = {0038-092X},
number = ,
volume = 135,
place = {United States},
year = {Sat Oct 01 00:00:00 EDT 2016},
month = {Sat Oct 01 00:00:00 EDT 2016}
}