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Title: Modeling charged defects and defects levels in semiconductors and oxides with DFT: An improved inside-out perspective.

Abstract not provided.
Authors:
Publication Date:
OSTI Identifier:
1258116
Report Number(s):
SAND2015-3847PE
583971
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Univiersity of Nevada Las Vegas Engineering Science Seminar Series held April 23, 2015 in Las Vegas, NV.
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English