III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials

Liu, Sheng; Keeler, Gordon A.; Reno, John L.; Sinclair, Michael B.; Brener, Igal

doi:10.1002/adom.201600240

Title: III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials

Journal Article · Fri Jun 10 00:00:00 EDT 2016 · Advanced Optical Materials

DOI:https://doi.org/10.1002/adom.201600240· OSTI ID:1257797

Liu, Sheng ^[1]; Keeler, Gordon A. ^[1]; Reno, John L. ^[1]; Sinclair, Michael B. ^[1]; Brener, Igal ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We demonstrate 2D and multilayer dielectric metamaterials made from III–V semiconductors using a monolithic fabrication process. The resulting structures could be used to recompress chirped femtosecond optical pulses and in a variety of other optical applications requiring low loss. Moreover, these III–V all-dielectric metamaterials could enable novel active applications such as efficient nonlinear frequency converters, light emitters, detectors, and modulators.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1257797

Report Number(s):: SAND-2016-4320J; 639556; TRN: US1601757

Journal Information:: Advanced Optical Materials, Journal Name: Advanced Optical Materials; ISSN 2195-1071

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 61 works

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