(Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices

Journal Article · Tue May 10 00:00:00 EDT 2016 · ECS Transactions (Online)

DOI:https://doi.org/10.1149/07203.0049ecst· OSTI ID:1257786

Gao, X. ^[1]; Mamaluy, D. ^[1]; Cyr, E. C. ^[1]; Marinella, M. J. ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

As CMOS technology approaches the end of its scaling, oxide-based memristors have become one of the leading candidates for post-CMOS memory and logic devices. In orderTo facilitate the understanding of physical switching mechanisms and accelerate experimental development of memristors, we have developed a three-dimensional fully-coupled electrical and thermal transport model, which captures all the important processes that drive memristive switching and is applicable for simulating a wide range of memristors. Moreover, the model is applied to simulate the RESET and SET switching in a 3D filamentary TaOx memristor. Extensive simulations show that the switching dynamics of the bipolar device is determined by thermally-activated field-dominant processes: with Joule heating, the raised temperature enables the movement of oxygen vacancies, and the field drift dominates the overall motion of vacancies. Simulated current-voltage hysteresis and device resistance profiles as a function of time and voltage during RESET and SET switching show good agreement with experimental measurement.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1257786
• Report Number(s): SAND2016-2238J; 625634
• Journal Information: ECS Transactions (Online), Vol. 72, Issue 3; ISSN 1938-6737
• Publisher: Electrochemical Society
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY