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Title: Anharmonicity in light scattering by optical phonons in GaAs1-xBix

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4952381· OSTI ID:1257752

We present a Raman spectroscopic study of GaAs1-xBix epilayers grown by molecular beam epitaxy. We have investigated the anharmonic effect on the GaAs-like longitudinal optical phonon mode (LO'GaAs) of GaAs1-xBix for different Bi concentrations at various temperatures. The results are analyzed in terms of the anharmonic damping effect induced by thermal and compositional disorder. We have observed that the anharmonicity increases with Bi concentration in GaAs1-xBix as evident from the increase in the anharmonicity constants. Additionally, the anharmonic lifetime of the optical phonon decreases with increasing Bi concentration in GaAs1-xBix.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1257752
Alternate ID(s):
OSTI ID: 1421082
Report Number(s):
NREL/JA-5K00-66640
Journal Information:
Journal of Applied Physics, Vol. 119, Issue 20; Related Information: Journal of Applied Physics; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

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