Anharmonicity in light scattering by optical phonons in GaAs1-xBix
Journal Article
·
· Journal of Applied Physics
- Indian Inst. of Science Education and Research Thiruvananthapuram (IISERTVM), Kerala (India)
- Jawaharlal Nehru Center for Advanced Scientific Research (JNCASR), Bangalore (India)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
We present a Raman spectroscopic study of GaAs1-xBix epilayers grown by molecular beam epitaxy. We have investigated the anharmonic effect on the GaAs-like longitudinal optical phonon mode (LO'GaAs) of GaAs1-xBix for different Bi concentrations at various temperatures. The results are analyzed in terms of the anharmonic damping effect induced by thermal and compositional disorder. We have observed that the anharmonicity increases with Bi concentration in GaAs1-xBix as evident from the increase in the anharmonicity constants. Additionally, the anharmonic lifetime of the optical phonon decreases with increasing Bi concentration in GaAs1-xBix.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1257752
- Alternate ID(s):
- OSTI ID: 1421082
- Report Number(s):
- NREL/JA-5K00-66640
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 20; Related Information: Journal of Applied Physics; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 8 works
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Related Subjects
36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
III-V semiconductors
linewidths
bismuth
thermoelectric effects
red shift
anharmonicity constants
crystal structure
crystal lattices
crystallographic defects
Raman spectroscopy
light scattering
epitaxy
thermal effects
elastic scattering
phonons
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
III-V semiconductors
linewidths
bismuth
thermoelectric effects
red shift
anharmonicity constants
crystal structure
crystal lattices
crystallographic defects
Raman spectroscopy
light scattering
epitaxy
thermal effects
elastic scattering
phonons