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Title: Polarization induced doped transistor

A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.
Authors:
 [1] ; ; ; ; ;
  1. (Grace)
Publication Date:
OSTI Identifier:
1255955
Report Number(s):
9,362,389
14/470,569
DOE Contract Number:
AR0000454
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Aug 27
Research Org:
University of Notre Dame du Lac, Notre Dame, IN (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS