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Title: Structural properties of Sb 2S 3 under pressure: Evidence of an electronic topological transition

High-pressure Raman spectroscopy and x-ray diffraction of Sb 2S 3 up to 53 GPa reveals two phase transitions at 5 GPa and 15 GPa. The first transition is evidenced by noticeable compressibility changes in distinct Raman-active modes, in the lattice parameter axial ratios, the unit cell volume, as well as in specific interatomic bond lengths and bond angles. By taking into account relevant results from the literature, we assign these effects to a second-order isostructural transition arising from an electronic topological transition in Sb 2S 3 near 5 GPa. Close comparison between Sb 2S 3 and Sb 2S 3 up to 10 GPa reveals a slightly diverse structural behavior for these two compounds after the isostructural transition pressure. This structural diversity appears to account for the different pressure-induced electronic behavior of Sb 2S 3 and Sb 2S 3 up to 10 GPa, i.e. the absence of an insulator-metal transition in Sb 2S 3 up to that pressure. Lastly, the second high-pressure modification appearing above 15 GPa appears to trigger a structural disorder at ~20 GPa; full decompression from 53 GPa leads to the recovery of an amorphous state.
Authors:
 [1] ;  [2] ;  [2]
  1. Oakland Univ., Rochester, MI (United States); Helmholtz-Zentrum Potsdam, Potsdam (Germany)
  2. Oakland Univ., Rochester, MI (United States)
Publication Date:
OSTI Identifier:
1255814
Grant/Contract Number:
FG02-99ER45775
Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Research Org:
Carnegie Inst. of Washington, Washington, DC (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; structure of solids and liquids; topological insulators