High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Bedair, S. M.; Harmon, Jeffrey L.; Carlin, C. Zachary; Hashem Sayed, Islam E.; Colter, P. C.

doi:10.1063/1.4951690

Title: High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Journal Article · Thu May 19 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4951690· OSTI ID:1253928

Bedair, S. M. ^[1];

^[1]; Carlin, C. Zachary ^[1]; Hashem Sayed, Islam E. ^[1]; Colter, P. C. ^[1]

Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: EE0005403

OSTI ID:: 1253928

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 108 Journal Issue: 20; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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References (16)

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AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application Jung, D.; Parker, C. A.; Ramdani, J. Journal of Applied Physics, Vol. 74, Issue 3, p. 2090-2093 https://doi.org/10.1063/1.354753	journal	August 1993
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A validated SPICE network simulation study on improving tunnel diodes by introducing lateral conduction layers: SPICE network simulation study on improving tunnel diodes Steiner, Marc; Guter, Wolfgang; Peharz, Gerhard Progress in Photovoltaics: Research and Applications, Vol. 20, Issue 3 https://doi.org/10.1002/pip.1133	journal	July 2011
A two‐junction cascade solar‐cell structure Bedair, S. M.; Lamorte, M. F.; Hauser, J. R. Applied Physics Letters, Vol. 34, Issue 1 https://doi.org/10.1063/1.90576	journal	January 1979
Highly conductive p ^+ + -AlGaAs/n ^+ + -GaInP tunnel junctions for ultra-high concentrator solar cells : Highly conductive p Barrigón, Enrique; García, Ivan; Barrutia, Laura Progress in Photovoltaics: Research and Applications, Vol. 22, Issue 4 https://doi.org/10.1002/pip.2476	journal	February 2014
Te doping of GaInP: Ordering and step structure Lee, S. H.; Fetzer, C. Y.; Stringfellow, G. B. Journal of Applied Physics, Vol. 85, Issue 7 https://doi.org/10.1063/1.369719	journal	April 1999
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Tellurium doping of InGaP for tunnel junction applications in triple junction solar cells Ebert, C.; Pulwin, Z.; Byrnes, D. Journal of Crystal Growth, Vol. 315, Issue 1 https://doi.org/10.1016/j.jcrysgro.2010.09.050	journal	January 2011
Resonant electron tunneling through defects in GaAs tunnel diodes Jandieri, K.; Baranovskii, S. D.; Rubel, O. Journal of Applied Physics, Vol. 104, Issue 9 https://doi.org/10.1063/1.3013886	journal	November 2008
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Mechanism of Zn and Si diffusion from a highly doped tunnel junction for InGaP/GaAs tandem solar cells Takamoto, Tatsuya; Yumaguchi, Masafumi; Ikeda, Eiji Journal of Applied Physics, Vol. 85, Issue 3 https://doi.org/10.1063/1.369278	journal	February 1999
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