skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization

Journal Article · · Acta Materialia

Sponsoring Organization:
USDOE
Grant/Contract Number:
2013T60315; 61235004; 11104109; 61307119; 11374119
OSTI ID:
1252325
Journal Information:
Acta Materialia, Journal Name: Acta Materialia Vol. 90 Journal Issue: C; ISSN 1359-6454
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 36 works
Citation information provided by
Web of Science

References (25)

Rapid‐phase transitions of GeTe‐Sb 2 Te 3 pseudobinary amorphous thin films for an optical disk memory journal March 1991
Resonant bonding in crystalline phase-change materials journal July 2008
Towards a universal memory? journal April 2005
Understanding the phase-change mechanism of rewritable optical media journal September 2004
Phase change memory technology
  • Burr, Geoffrey W.; Breitwisch, Matthew J.; Franceschini, Michele
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 2 https://doi.org/10.1116/1.3301579
journal March 2010
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal July 1996
Crystal structure of the Fe2CrSe4 compound from X-ray powder diffraction journal February 2004
Vacancy-mediated three-center four-electron bonds in GeTe-Sb 2 Te 3 phase-change memory alloys journal April 2013
Structural basis for the fast phase change of Ge2Sb2Te5: Ring statistics analogy between the crystal and amorphous states journal November 2006
Optical contrast and laser-induced phase transition in GeCu 2 Te 3 thin film journal February 2013
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
From ultrasoft pseudopotentials to the projector augmented-wave method journal January 1999
p-Type conductivity of GeTe: The role of lone-pair electrons journal September 2012
Role of Electronic Excitation in the Amorphization of Ge-Sb-Te Alloys journal June 2011
Fourfold coordinated Te atoms in amorphous GeCu2Te3 phase change material journal January 2013
Accurate and simple analytic representation of the electron-gas correlation energy journal June 1992
Ultrafast lasers—reliable tools for advanced materials processing journal April 2014
Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials journal March 2008
Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials journal October 2007
Origin of the unusual reflectance and density contrasts in the phase-change material Cu 2 GeTe 3 journal June 2013
The Dependence of Crystal Structure of Te-Based Phase-Change Materials on the Number of Valence Electrons journal March 2004
Nature of Atomic Bonding and Atomic Structure in the Phase-Change Ge 2 Sb 2 Te 5 Glass journal November 2009
Crystallization process and thermal stability of Ge1Cu2Te3 amorphous thin films for use as phase change materials journal February 2012
Theoretical characterization of reduction dynamics for graphene oxide by alkaline-earth metals journal February 2013
One order of magnitude faster phase change at reduced power in Ti-Sb-Te journal July 2014