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Title: Pressure and shear-induced amorphization of silicon

Abstract

We report that high-power, pulsed, laser-driven shock compression of monocrystalline silicon produces directional amorphization, revealed by high-resolution transmission electron microscopy and confirmed by molecular dynamics simulations. At the lowest energy level experiment, generating a pressure of ~4 GPa, silicon reacts elastically. At intermediate energy levels (P~11 and 22 GPa), amorphization is observed both at the surface and directionally, along planes making angles close to the maximum shear. At the highest laser energy level explored here, (Ppeak ~28 GPa), the recovered sample shows a nanocrystalline microstructure near the surface. This nanocrystalline structure forms by crystallization from the amorphous phase and is thought to be a post-shock phenomenon. Shear-induced lattice defects (stacking faults and twins) on crystallographic slip planes play a crucial role in the onset of amorphization. Molecular dynamics show that silicon behaves elastically until ~10 GPa and, at slightly higher pressures, partial dislocations and stacking faults are emitted from the surface. Driven by the high-amplitude stress pulse, these defects travel inwards along specific crystallographic orientations and intersect, leading to further defect creation, additional plastic work, and, at higher pressures, amorphous bands in intersecting patterns. The typical high-pressure solid–solid phase transitions of silicon are not observed whereas the high shear stressesmore » are relaxed by localized dislocation motion/interactions and eventually by directional amorphization, which occurs below the critical hydrostatic pressure for melting of silicon in shock compression. It is therefore proposed that the combined effects of hydrostatic and shear stresses lead to directional amorphization.« less

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Univ. of California, San Diego, CA (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR); National Academy of Science and Technology (ANCyT)
OSTI Identifier:
1251808
Alternate Identifier(s):
OSTI ID: 1252574; OSTI ID: 1462266
Grant/Contract Number:  
NA0002080; 09-LR-06-118456-MEYM; FG52-09NA-29043; PICT-0092; 2003-2015 M003
Resource Type:
Journal Article: Published Article
Journal Name:
Extreme Mechanics Letters
Additional Journal Information:
Journal Name: Extreme Mechanics Letters Journal Volume: 5 Journal Issue: C; Journal ID: ISSN 2352-4316
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English
Subject:
36 MATERIALS SCIENCE; laser shock compression; silicon; amorphization; nanocrystalline Silicon

Citation Formats

Zhao, S., Kad, B., Hahn, E. N., Remington, B. A., Wehrenberg, C. E., Huntington, C. M., Park, H. -S., Bringa, E. M., More, K. L., and Meyers, M. A. Pressure and shear-induced amorphization of silicon. Netherlands: N. p., 2015. Web. doi:10.1016/j.eml.2015.10.001.
Zhao, S., Kad, B., Hahn, E. N., Remington, B. A., Wehrenberg, C. E., Huntington, C. M., Park, H. -S., Bringa, E. M., More, K. L., & Meyers, M. A. Pressure and shear-induced amorphization of silicon. Netherlands. https://doi.org/10.1016/j.eml.2015.10.001
Zhao, S., Kad, B., Hahn, E. N., Remington, B. A., Wehrenberg, C. E., Huntington, C. M., Park, H. -S., Bringa, E. M., More, K. L., and Meyers, M. A. 2015. "Pressure and shear-induced amorphization of silicon". Netherlands. https://doi.org/10.1016/j.eml.2015.10.001.
@article{osti_1251808,
title = {Pressure and shear-induced amorphization of silicon},
author = {Zhao, S. and Kad, B. and Hahn, E. N. and Remington, B. A. and Wehrenberg, C. E. and Huntington, C. M. and Park, H. -S. and Bringa, E. M. and More, K. L. and Meyers, M. A.},
abstractNote = {We report that high-power, pulsed, laser-driven shock compression of monocrystalline silicon produces directional amorphization, revealed by high-resolution transmission electron microscopy and confirmed by molecular dynamics simulations. At the lowest energy level experiment, generating a pressure of ~4 GPa, silicon reacts elastically. At intermediate energy levels (P~11 and 22 GPa), amorphization is observed both at the surface and directionally, along planes making angles close to the maximum shear. At the highest laser energy level explored here, (Ppeak ~28 GPa), the recovered sample shows a nanocrystalline microstructure near the surface. This nanocrystalline structure forms by crystallization from the amorphous phase and is thought to be a post-shock phenomenon. Shear-induced lattice defects (stacking faults and twins) on crystallographic slip planes play a crucial role in the onset of amorphization. Molecular dynamics show that silicon behaves elastically until ~10 GPa and, at slightly higher pressures, partial dislocations and stacking faults are emitted from the surface. Driven by the high-amplitude stress pulse, these defects travel inwards along specific crystallographic orientations and intersect, leading to further defect creation, additional plastic work, and, at higher pressures, amorphous bands in intersecting patterns. The typical high-pressure solid–solid phase transitions of silicon are not observed whereas the high shear stresses are relaxed by localized dislocation motion/interactions and eventually by directional amorphization, which occurs below the critical hydrostatic pressure for melting of silicon in shock compression. It is therefore proposed that the combined effects of hydrostatic and shear stresses lead to directional amorphization.},
doi = {10.1016/j.eml.2015.10.001},
url = {https://www.osti.gov/biblio/1251808}, journal = {Extreme Mechanics Letters},
issn = {2352-4316},
number = C,
volume = 5,
place = {Netherlands},
year = {Thu Oct 22 00:00:00 EDT 2015},
month = {Thu Oct 22 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at https://doi.org/10.1016/j.eml.2015.10.001

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