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Title: Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.

Abstract not provided.
Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1251549
Report Number(s):
SAND2015-3445C
583605
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Electrochemical Society Meeting held October 11-16, 2015 in Phoenix, AZ.
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English