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Title: Using Minority Carrier Lifetime Measurement to Determine Saw Damage Characteristics on Si Wafer Surfaces

The damage on the Si wafer surfaces, caused by ingot cutting, is determined from measurement of minority carrier lifetime (..tau..eff). Samples are sequentially etched to remove thin layers from each surface and lifetime is measured after each etch step. The thickness-removed at which the lifetime reaches a peak value corresponds to the damage depth. This technique also allows the depth distribution of the damage to be quantified in terms of surface recombination velocity (SRV). An accurate measurement of ..tau..eff requires corrections to optical reflection, and transmission to account for changes in the surface morphology and in the wafer thickness.
Authors:
; ;
Publication Date:
OSTI Identifier:
1251353
Report Number(s):
NREL/CP-5J00-63643
DOE Contract Number:
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2016, New Orleans, Louisiana; Related Information: Proceedings of the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2016, New Orleans, Louisiana
Publisher:
Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE silicon; damage; minority carrier lifetime; acid etch