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Title: Effects of Stoichiometry in Undoped CdTe Heteroepilayers on Si

Crystalline CdTe layers have been grown heteroepitaxially onto crystalline Si substrates to establish material parameters needed for advanced photovoltaic (PV) device development and related simulation. These studies suggest that additional availability of the intrinsic anion (i.e., Te) during molecular beam epitaxy deposition can improve structural and optoelectronic quality of the epilayer and the interface between Si substrate and the epilayer. This is seen most notably for thin CdTe epitaxial films (<; ~10 micrometers). Although these observations are foundationally important, they are also relevant to envisioned high-performance multijunction II-VI alloy PV devices-where thin layers will be required to achieve production costs aligned with market constraints.
Authors:
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Publication Date:
OSTI Identifier:
1250677
Report Number(s):
NREL/CP-5K00-63560
DOE Contract Number:
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana; Related Information: Proceedings of the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana
Publisher:
Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE cadmium telluride; characterization; heteroepilayers; photovoltaic device; silicon; stoichiometry