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Title: Thermal Treatment Improvement of CuSbS2 Absorbers

Thermal treatment in Sb2S3 vapor was used to improve the quality of CuSbS2 thin films, a promising non-toxic and earth-abundant absorber. A change in the CuSbS2 crystallographic texture and a decrease in the lattice stress were observed, as well as increases in the grain size, photoluminescence intensity and photoconductivity. To eliminate the influence of the possible Sb2S3 rich surface layer on photovoltaic performance, a selective chemical etching with KOH was developed.
Authors:
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Publication Date:
OSTI Identifier:
1250672
Report Number(s):
NREL/CP-5K00-64232
DOE Contract Number:
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana; Related Information: Proceedings of the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana
Publisher:
Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE annealing; CuSbS2; non-toxic and earth-abundant absorber; Sb2S3 selective chemical etch