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Title: Optoelectronic Investigation of Sb-Doped Cu(In, Ga)Se2

Abstract

Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1250663
Report Number(s):
NREL/CP-5K00-63622
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana; Related Information: Proceedings of the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; Cu(In,Ga)Se2; thin-films; solar cells; photoluminescence

Citation Formats

Mansfield, Lorelle M., Kuciauskas, Darius, Dippo, Patricia, Li, Jian V., Bowers, Karen, To, Bobby, DeHart, Clay, and Ramanathan, Kannan. Optoelectronic Investigation of Sb-Doped Cu(In, Ga)Se2. United States: N. p., 2015. Web. doi:10.1109/PVSC.2015.7356156.
Mansfield, Lorelle M., Kuciauskas, Darius, Dippo, Patricia, Li, Jian V., Bowers, Karen, To, Bobby, DeHart, Clay, & Ramanathan, Kannan. Optoelectronic Investigation of Sb-Doped Cu(In, Ga)Se2. United States. https://doi.org/10.1109/PVSC.2015.7356156
Mansfield, Lorelle M., Kuciauskas, Darius, Dippo, Patricia, Li, Jian V., Bowers, Karen, To, Bobby, DeHart, Clay, and Ramanathan, Kannan. 2015. "Optoelectronic Investigation of Sb-Doped Cu(In, Ga)Se2". United States. https://doi.org/10.1109/PVSC.2015.7356156.
@article{osti_1250663,
title = {Optoelectronic Investigation of Sb-Doped Cu(In, Ga)Se2},
author = {Mansfield, Lorelle M. and Kuciauskas, Darius and Dippo, Patricia and Li, Jian V. and Bowers, Karen and To, Bobby and DeHart, Clay and Ramanathan, Kannan},
abstractNote = {Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.},
doi = {10.1109/PVSC.2015.7356156},
url = {https://www.osti.gov/biblio/1250663}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jun 14 00:00:00 EDT 2015},
month = {Sun Jun 14 00:00:00 EDT 2015}
}

Conference:
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