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Title: Atomic layer deposition of MnS: phase control and electrochemical applications.

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure r-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase, consisting of both r- and a-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS) allow the derivation of a self-consistent reaction mechanism. Finally, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cycle stability and near-theoretical capacity.
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Publication Date:
OSTI Identifier:
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: ACS Applied Materials and Interfaces; Journal Volume: 8; Journal Issue: 4
American Chemical Society
Research Org:
Argonne National Laboratory (ANL)
Sponsoring Org:
USDOE Office of Science - Energy Frontier Research Center - Argonne-Northwestern Solar Energy Research (ANSER); USDOE Office of Science - Energy Frontier Research Center - Center for Electrical Energy Storage
Country of Publication:
United States