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Title: Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure r-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase, consisting of both r- and a-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS) allow the derivation of a self-consistent reaction mechanism. Lastly, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cycle stability and near-theoretical capacity.
Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [2] ;  [3] ;  [2] ;  [3]
  1. Univ. of Wisconsin, Stevens Point, WI (United States). Dept. of Chemistry
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Energy Systems Division
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Publication Date:
OSTI Identifier:
1248178
Grant/Contract Number:
AC02-06CH11357
Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 8; Journal Issue: 4; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Science (SC), Workforce Development for Teachers and Scientists (WDTS) (SC-27)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE