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Title: Energy storage device with large charge separation

High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.
Authors:
; ;
Publication Date:
OSTI Identifier:
1246835
Report Number(s):
9,312,398
13/135,798
DOE Contract Number:
AR0000069
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Jul 13
Research Org:
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
25 ENERGY STORAGE; 36 MATERIALS SCIENCE