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This content will become publicly available on January 8, 2016

Title: Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material׳s electrical properties

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1246424
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 409; Journal Issue: C; Related Information: CHORUS Timestamp: 2017-07-04 09:41:17; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation (NA-20)
Country of Publication:
Netherlands
Language:
English