Direct Observation of the E_ Resonant State in GaAs1-xBix

Journal Article · Tue Dec 15 00:00:00 EST 2015 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.92.241201· OSTI ID:1245541

Alberi, Kirstin; Beaton, Daniel A.; Mascarenhas, Angelo

Bismuth-derived resonant states with T2 symmetry are detected in the valence band of GaAs1-xBix using electromodulated reflectance. A doublet is located 42 meV below the valence band edge of GaAs that is split by local strain around isolated Bi impurity atoms. A transition associated with a singlet is also observed just above the GaAs spin orbit split-off band. These states move deeper into the valence band with increasing Bi concentration but at a much slower rate than the well-known giant upward movement of the valence band edge in GaAs1-xBix. Our results provide key new insights for clarifying the mechanisms by which isovalent impurities alter the bandstructure of the host semiconductor.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1245541
• Report Number(s): NREL/JA-5K00-65508
• Journal Information: Physical Review B, Vol. 92, Issue 24; Related Information: Physical Review, B. Condensed Matter and Materials Physics; ISSN 2469-9950
• Publisher: American Physical Society (APS)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
GaAsBi
resonant level
semiconductor optical properties