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Title: Spin Hall magnetoresistance in CoFe2O4/Pt films

Pulse laser deposition and magnetron sputtering techniques have been employed to prepare MgO(001)//CoFe2O4/Pt samples. Cross section transmission electron microscope results prove that the CoFe2O4 film epitaxially grew along (001) direction. X-ray magnetic circular dichroism results show that magnetic proximity effect in this sample is negligible. Magnetoresistance (MR) properties confirm that spin Hall MR (SMR) dominates in this system. Spin Hall effect-induced anomalous Hall voltage was also observed in this sample. Lastly, these results not only demonstrate the universality of SMR effect but also demonstrate the utility in spintronics of CoFe2O4 as a new type of magnetic insulator.
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  1. Chinese Academy of Sciences, Beijing (China)
  2. Nanyang Technological Univ., Singapore (Singapore)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
IEEE Transactions on Magnetics
Additional Journal Information:
Journal Volume: 51; Journal Issue: 11; Journal ID: ISSN 0018-9464
Institute of Electrical and Electronics Engineers. Magnetics Group
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Spin Hall magnetoresistance; X-ray magnetic circular dichroism; anomalous Hall effect; ferrimagnetic insulator