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Title: Diode having trenches in a semiconductor region

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.
Authors:
; ;
Publication Date:
OSTI Identifier:
1243316
Report Number(s):
9,293,538
14/082,618
DOE Contract Number:
AR0000123
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Nov 18
Research Org:
Massachusetts Institute of Technology, Cambridge, MA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION