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This content will become publicly available on March 17, 2017

Title: On trapping mechanisms at oxide-traps in Al 2 O 3 /GaN metal-oxide-semiconductor capacitors

Authors:
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Publication Date:
OSTI Identifier:
1242325
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 11; Related Information: CHORUS Timestamp: 2016-12-29 09:08:42; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English