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Title: Comparison of Single Event Transients Generated by Short Pulsed X-Rays, Lasers and Heavy Ions

We report an experimental study of the transients generated by pulsed x-rays, heavy ions, and different laser wavelengths in a Si p-i-n photodiode. We compare the charge collected by all of the excitation methods to determine the equivalent LET for pulsed x-rays relative to heavy ions. Our comparisons show that pulsed x-rays from synchrotron sources can generate a large range of equivalent LET and generate transients similar to those excited by laser pulses and heavy ion strikes. We also look at how the pulse width of the transients changes for the different excitation methods. We show that the charge collected with pulsed x-rays is greater than expected as the x-ray photon energy increases. Combined with their capability of focusing to small spot sizes and of penetrating metallization, pulsed x-rays are a promising new tool for high resolution screening of SEE susceptibility
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Publication Date:
OSTI Identifier:
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: IEEE Transactions on Nuclear Science; Journal Volume: 61; Journal Issue: 6
Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
Argonne National Laboratory (ANL)
Sponsoring Org:
Aerospace Corporation; USDOE Office of Science - Office of Basic Energy Sciences; Canadian Light Source, Inc.
Country of Publication:
United States
single event transients; Integrated circuit reliability; radiation hardening; semiconductor device reliability; single event effects; synchrotron radiation; x-ray applications