Exciton-dominated dielectric function of atomically thin MoS2 films

Yu, Yiling; Yu, Yifei; Cai, Yongqing; Li, Wei; Gurarslan, Alper; Peelaers, Hartwin; Aspnes, David E.; Van de Walle, Chris G.; Nguyen, Nhan V.; Zhang, Yong -Wei; Cao, Linyou

doi:10.1038/srep16996

Title: Exciton-dominated dielectric function of atomically thin MoS₂ films

Journal Article · Tue Nov 24 00:00:00 EST 2015 · Scientific Reports

DOI:https://doi.org/10.1038/srep16996· OSTI ID:1241023

Yu, Yiling ^[1]; Yu, Yifei ^[1]; Cai, Yongqing ^[2]; Li, Wei ^[3]; Gurarslan, Alper ^[1]; Peelaers, Hartwin ^[4]; Aspnes, David E. ^[1]; Van de Walle, Chris G. ^[4]; Nguyen, Nhan V. ^[3]; Zhang, Yong -Wei ^[2]; Cao, Linyou ^[1]

North Carolina State Univ., Raleigh, NC (United States)
Institute of High Performance Computing, A*STAR (Singapore)
National Institute of Standards and Technology, Gaithersburg, MD (United States)
Univ. of California, Santa Barbara, CA (United States)

We systematically measure the dielectric function of atomically thin MoS₂ films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5–7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5–7 layers thick but turns to increase with the layer number for thicker films. We show that this is because the excitonic effect is very strong in the thin MoS₂ films and its contribution to the dielectric function may dominate over the contribution of the band structure. We also extract the value of layer-dependent exciton binding energy and Bohr radius in the films by fitting the experimental results with an intuitive model. The dominance of excitonic effects is in stark contrast with what reported at conventional materials whose dielectric functions are usually dictated by band structures. Lastly, the knowledge of the dielectric function may enable capabilities to engineer the light-matter interactions of atomically thin MoS₂ films for the development of novel photonic devices, such as metamaterials, waveguides, light absorbers, and light emitters.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: FG02-07ER46434

OSTI ID:: 1241023

Journal Information:: Scientific Reports, Vol. 5; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 147 works

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Title: Exciton-dominated dielectric function of atomically thin MoS₂ films