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Title: Exchange-Driven Spin Relaxation in Ferromagnet-Oxide-Semiconductor Heterostructures

Journal Article · · Physical Review Letters

Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
FG02-03ER46054
OSTI ID:
1240765
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Vol. 116 Journal Issue: 10; ISSN 0031-9007
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

References (31)

Optical and electronic manipulation of spin coherence in semiconductors journal May 2003
Observation of the spin-Seebeck effect in a ferromagnetic semiconductor journal September 2010
Room-Temperature Spin Memory in Two-Dimensional Electron Gases journal August 1997
Erratum: Theory of magnon-driven spin Seebeck effect [Phys. Rev. B 81 , 214418 (2010)] journal September 2010
Coherent spin oscillations in bulk GaAs at room temperature journal December 2006
Theory of magnon-driven spin Seebeck effect journal June 2010
Electrical spin injection in a ferromagnetic semiconductor heterostructure journal December 1999
Anisotropic spin relaxation in n -GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei journal October 2015
Electrical detection of spin transport in lateral ferromagnet–semiconductor devices journal February 2007
Optical Manipulation of Nuclear Spin by a Two-Dimensional Electron Gas journal March 2001
Ferromagnetic Imprinting of Nuclear Spins in Semiconductors journal October 2001
Resonant Spin Amplification in n -Type GaAs journal May 1998
Injection and detection of a spin-polarized current in a light-emitting diode journal December 1999
Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells journal October 2001
Theory of optical orientation in n -type semiconductors journal September 2004
Low field electron-nuclear spin coupling in gallium arsenide under optical pumping conditions journal June 1977
Magnetic-field dependence of electron spin relaxation in n -type semiconductors journal December 2002
Distinguishing Spin Relaxation Mechanisms in Organic Semiconductors journal April 2013
Band structure of the epitaxial Fe∕MgO∕GaAs(001) tunnel junction studied by x-ray and ultraviolet photoelectron spectroscopies journal October 2006
Spin Seebeck insulator journal September 2010
Spin Polarization of Semiconductor Carriers by Reflection off a Ferromagnet journal September 2002
Conversion of spin current into charge current at room temperature: Inverse spin-Hall effect journal May 2006
Thermally driven spin injection from a ferromagnet into a non-magnetic metal journal September 2010
All-Optical Magnetic Resonance in Semiconductors journal January 2000
Spin pumping and magnetization dynamics in metallic multilayers journal December 2002
Observation of the spin Seebeck effect journal October 2008
Inversion of Ferromagnetic Proximity Polarization by MgO Interlayers journal June 2008
Spin relaxation in materials lacking coherent charge transport journal September 2014
Dynamic Exchange Coupling in Magnetic Bilayers journal May 2003
Spontaneous spin coherence in n -GaAs produced by ferromagnetic proximity polarization journal March 2002
Fabrication of sub-transistor via holes for small and efficient power amplifiers using highly selective GaAs∕InGaP wet etching
  • Uchiyama, Hiroyuki; Ohta, Hiroshi; Shiota, Takashi
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 24, Issue 2 https://doi.org/10.1116/1.2178368
journal January 2006

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