Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene

Liu, Xiaolong; Balla, Itamar; Bergeron, Hadallia; Campbell, Gavin P.; Bedzyk, Michael J.; Hersam, Mark C.

doi:10.1021/acsnano.5b06398

Title: Rotationally Commensurate Growth of MoS₂ on Epitaxial Graphene

Journal Article · Fri Nov 13 00:00:00 EST 2015 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.5b06398· OSTI ID:1240188

Liu, Xiaolong ^[1]; Balla, Itamar ^[1]; Bergeron, Hadallia ^[1]; Campbell, Gavin P. ^[1]; Bedzyk, Michael J. ^[1]; Hersam, Mark C. ^[1]

Northwestern Univ., Evanston, IL (United States)

Atomically thin MoS₂/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures, including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thickness-controlled van der Waals epitaxial growth of MoS₂ on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a two-dimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS₂ and EG is driven by the energetically favorable alignment of their respective lattices and results in nearly strain-free MoS₂, as evidenced by synchrotron X-ray scattering and atomic-resolution scanning tunneling microscopy (STM). Finally, the electronic nature of the MoS₂/EG heterostructure is elucidated with STM and scanning tunneling spectroscopy, which reveals bias-dependent apparent thickness, band bending, and a reduced band gap of ~0.4 eV at the monolayer MoS₂ edges.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Institute of Standards and Technology (NIST); US Department of the Navy, Office of Naval Research (ONR)

Grant/Contract Number:: 70NANB14H012; FG02-09ER16109; AC02-06CH11357; SC0001059; N00014-14-1-0669; DMR01121262

OSTI ID:: 1240188

Journal Information:: ACS Nano, Vol. 10, Issue 1; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: ENGLISH

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Cited by: 162 works

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Kastl, C.; Chen, C. T.; Koch, R. J.; +9 more

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
transition metal dichalcogenide
silicon carbide
scanning tunneling microscopy
synchrotron x-ray scattering
chemical vapor deposition
van der Waals heterostructure

Title: Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene

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