High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential

Lu, Tzu -Ming; Laroche, Dominique; Huang, S. -H.; Chuang, Y.; Li, J. -Y.; Liu, C. W.

doi:10.1038/srep20967

Title: High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential

Journal Article · Fri Jan 01 00:00:00 EST 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep20967· OSTI ID:1240094

Lu, Tzu -Ming ^[1]; Laroche, Dominique ^[1]; Huang, S. -H. ^[2]; Chuang, Y. ^[2]; Li, J. -Y. ^[2]; Liu, C. W. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Taiwan Univ., Taipei (Taiwan); National Nano Device Lab., Hsinchu (Taiwan)

In the presence of a lateral periodic potential modulation, two-dimensional electrons may exhibit interesting phenomena, such as a graphene-like energy-momentum dispersion, Bloch oscillations, or the Hofstadter butterfly band structure. To create a sufficiently strong potential modulation using conventional semiconductor heterostructures, aggressive device processing is often required, unfortunately resulting in strong disorder that masks the sought-after effects. Here, we report a novel fabrication process flow for imposing a strong lateral potential modulation onto a capacitively induced two-dimensional electron system, while preserving the host material quality. Using this process flow, the electron density in a patterned Si/SiGe heterostructure can be tuned over a wide range, from 4.4 × 10¹⁰ cm^–2 to 1.8 × 10¹¹ cm^–2, with a peak mobility of 6.4 × 10⁵ cm²/V·s. The wide density tunability and high electron mobility allow us to observe sequential emergence of commensurability oscillations as the density, the mobility, and in turn the mean free path, increase. Magnetic-field-periodic quantum oscillations associated with various closed orbits also emerge sequentially with increasing density. We show that, from the density dependence of the quantum oscillations, one can directly extract the steepness of the imposed superlattice potential. Lastly, this result is then compared to a conventional lateral superlattice model potential.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1240094

Report Number(s):: SAND2016-0426J; 618630

Journal Information:: Scientific Reports, Vol. 6, Issue 2; ISSN 2045-2322

Country of Publication:: United States

Language:: English

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Cited by: 1 work

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