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Title: Low-temperature photoluminescence analysis of CdTeSe crystals for radiation-detector applications

Goal: Understanding the changes of material defects in CdTeSe following annealing. Experimental results and discussions: Infrared (IR) transmission microscopy; current-voltage measurements (Highlight: Improvement of resistivity of un-doped crystals after annealing); low-temperature photoluminescence (PL) spectrum of as-grown and annealed samples.
Authors:
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Publication Date:
OSTI Identifier:
1239777
Report Number(s):
BNL--108503-2015-CP
R&D Project: 20062; NN2001
DOE Contract Number:
SC00112704
Resource Type:
Conference
Resource Relation:
Conference: The U.S. Workshop on the Physics and Chemistry of II-VI Materials; Chicago, IL; 20151005 through 20151008
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE photoluminescence; CdTeSe crystals; radiation-detector applications