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Title: Low-temperature photoluminescence analysis of CdTeSe crystals for radiation-detector applications

Abstract

Goal: Understanding the changes of material defects in CdTeSe following annealing. Experimental results and discussions: Infrared (IR) transmission microscopy; current-voltage measurements (Highlight: Improvement of resistivity of un-doped crystals after annealing); low-temperature photoluminescence (PL) spectrum of as-grown and annealed samples.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22)
OSTI Identifier:
1239777
Report Number(s):
BNL-108503-2015-CP
R&D Project: 20062; NN2001
DOE Contract Number:  
SC00112704
Resource Type:
Conference
Resource Relation:
Conference: The U.S. Workshop on the Physics and Chemistry of II-VI Materials; Chicago, IL; 20151005 through 20151008
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; photoluminescence; CdTeSe crystals; radiation-detector applications

Citation Formats

YANG, G., Roy, U. N., Bolotnikov, A. E., Cui, Y., Camarda, G. S., Hossain, A., and and James, R. B. Low-temperature photoluminescence analysis of CdTeSe crystals for radiation-detector applications. United States: N. p., 2015. Web.
YANG, G., Roy, U. N., Bolotnikov, A. E., Cui, Y., Camarda, G. S., Hossain, A., & and James, R. B. Low-temperature photoluminescence analysis of CdTeSe crystals for radiation-detector applications. United States.
YANG, G., Roy, U. N., Bolotnikov, A. E., Cui, Y., Camarda, G. S., Hossain, A., and and James, R. B. 2015. "Low-temperature photoluminescence analysis of CdTeSe crystals for radiation-detector applications". United States. https://www.osti.gov/servlets/purl/1239777.
@article{osti_1239777,
title = {Low-temperature photoluminescence analysis of CdTeSe crystals for radiation-detector applications},
author = {YANG, G. and Roy, U. N. and Bolotnikov, A. E. and Cui, Y. and Camarda, G. S. and Hossain, A. and and James, R. B.},
abstractNote = {Goal: Understanding the changes of material defects in CdTeSe following annealing. Experimental results and discussions: Infrared (IR) transmission microscopy; current-voltage measurements (Highlight: Improvement of resistivity of un-doped crystals after annealing); low-temperature photoluminescence (PL) spectrum of as-grown and annealed samples.},
doi = {},
url = {https://www.osti.gov/biblio/1239777}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Oct 05 00:00:00 EDT 2015},
month = {Mon Oct 05 00:00:00 EDT 2015}
}

Conference:
Other availability
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