Magnetotransport study of (Sb 1−x Bi x ) 2 Te 3 thin films on mica substrate for ideal topological insulator
In this study, we deposited high quality (Sb1–xBix)2Te3 on mica substrate by molecular beam epitaxy and investigated their magnetotransport properties. It is found that the average surface roughness of thin films is lower than 2 nm. Moreover, a local maxima on the sheet resistance is obtained with x = 0.043, indicating a minimization of bulk conductivity at this composition. For (Sb0.957Bi0.043)2Te3, weak antilocalization with coefficient of -0.43 is observed, confirming the existence of 2D surface states. Moreover Shubnikov-de Hass oscillation behavior occurs under high magnetic field. The 2D carrier density is then determined as 0.81 × 1016 m–2, which is lower than that of most TIs reported previously, indicating that (Sb0.957Bi0.043)2Te3 is close to ideal TI composition of which the Dirac point and Fermi surface cross within the bulk bandgap. Our results thus demonstrate the best estimated composition for ideal TI is close to (Sb0.957Bi0.043)2Te3 and will be helpful for designing TI-based devices.
- Research Organization:
- Ames Lab., Ames, IA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC02-07CH11358; 1201883
- OSTI ID:
- 1239704
- Alternate ID(s):
- OSTI ID: 1240746; OSTI ID: 1421030
- Report Number(s):
- IS-J-8879
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Vol. 6 Journal Issue: 5; ISSN 2158-3226
- Publisher:
- American Institute of PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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