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Title: Towards High-Fidelity InGaN Interatomic Potentials.

Abstract not provided.
Authors:
; ; ; ; ;
Publication Date:
OSTI Identifier:
1238561
Report Number(s):
SAND2015-0956C
566921
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 2015 Compound Semiconductor Week the 42nd International Symposium on Compound Semiconductors and the 27th International Conference on Indium Phosphide held June 28 - July 2, 2015 in Santa Barba, CA.
Research Org:
Sandia National Laboratories (SNL-CA), Livermore, CA (United States); Sandia National Laboratories, Albuquerque, NM
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English