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Title: Fabrication of flat SiGe heterostructure nanomembrane windows via strain-relief patterning

The lattice mismatch between SiGe and Si in heteroepitaxial Si/SiGe/Si trilayers leads to buckling when confined nanomembrane windows formed from these heterostructures are released from silicon-on-insulator substrates. We demonstrate that large areas in which the curvature and curvature-induced strain are reduced by an order of magnitude can be produced by patterning the windows to concentrate buckling in narrow arms with low flexural rigidity supporting a flat central region. Synchrotron x-ray thermal diffuse scattering shows that the improved flatness of patterned windows permits fundamental studies with fidelity similar to what can be achieved with flat single-component Si nanomembranes.
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Publication Date:
OSTI Identifier:
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Physics. D, Applied Physics; Journal Volume: 48; Journal Issue: 1
IOP Publishing
Research Org:
Argonne National Laboratory (ANL)
Sponsoring Org:
USDOE Office of Science - Office of Basic Energy Sciences; Air Force Research Laboratory - Air Force Office of Scientific Research (AFOSR)
Country of Publication:
United States
buckling; nanomembrane; silicon; silicon–germanium; strain