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Title: Analytic expressions for Atomic Layer Deposition: coverage, throughput, and materials utilization in cross-flow, particle coating, and spatial ALD

In this work, the authors present analytic models for atomic layer deposition (ALD) in three common experimental configurations: cross-flow, particle coating, and spatial ALD. These models, based on the plug-flow and well-mixed approximations, allow us to determine the minimum dose times and materials utilization for all three configurations. A comparison between the three models shows that throughput and precursor utilization can each be expressed by universal equations, in which the particularity of the experimental system is contained in a single parameter related to the residence time of the precursor in the reactor. For the case of cross-flow reactors, the authors show how simple analytic expressions for the reactor saturation profiles agree well with experimental results. Consequently, the analytic model can be used to extract information about the ALD surface chemistry (e. g., the reaction probability) by comparing the analytic and experimental saturation profiles, providing a useful tool for characterizing new and existing ALD processes. (C) 2014 American Vacuum Society
Authors:
;
Publication Date:
OSTI Identifier:
1238071
DOE Contract Number:
AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 3
Publisher:
American Vacuum Society
Research Org:
Argonne National Laboratory (ANL)
Sponsoring Org:
USDOE Office of Science - Energy Frontier Research Center - Argonne-Northwestern Solar Energy Research (ANSER); USDOE Office of Science - Office of High Energy Physics
Country of Publication:
United States
Language:
English
Subject:
ALD; APPROXIMATIONS; CHEMICAL-VAPOR-DEPOSITION; CONFORMALITY; DIFFUSION; KINETICS; KINETICS; MODEL; PRECURSOR; PROBABILITY