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Title: Minimal physical requirements for crystal growth self-poisoning

Journal Article · · Journal of Chemical Physics
DOI:https://doi.org/10.1063/1.4941457· OSTI ID:1379091
 [1];  [2];  [2]
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Kansas State Univ., Manhattan, KS (United States)

Self-poisoning is a kinetic trap that can impair or prevent crystal growth in a wide variety of physical settings. In this paper, we use dynamic mean-field theory and computer simulation to argue that poisoning is ubiquitous because its emergence requires only the notion that a molecule can bind in two (or more) ways to a crystal; that those ways are not energetically equivalent; and that the associated binding events occur with sufficiently unequal probability. If these conditions are met then the steady-state growth rate is in general a non-monotonic function of the thermodynamic driving force for crystal growth, which is the characteristic of poisoning. Finally, our results also indicate that relatively small changes of system parameters could be used to induce recovery from poisoning.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Inst. of Health (NIH) (United States); National Science Foundation (NSF)
Grant/Contract Number:
AC02-05CH11231; R01GM107487; CNS-1006860; EPS-1006860; EPS-0919443
OSTI ID:
1379091
Alternate ID(s):
OSTI ID: 1237770
Journal Information:
Journal of Chemical Physics, Vol. 144, Issue 6; ISSN 0021-9606
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 13 works
Citation information provided by
Web of Science

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Catalystlike role of impurities in speeding layer-by-layer growth journal October 2019

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