Minimal physical requirements for crystal growth self-poisoning
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Kansas State Univ., Manhattan, KS (United States)
Self-poisoning is a kinetic trap that can impair or prevent crystal growth in a wide variety of physical settings. In this paper, we use dynamic mean-field theory and computer simulation to argue that poisoning is ubiquitous because its emergence requires only the notion that a molecule can bind in two (or more) ways to a crystal; that those ways are not energetically equivalent; and that the associated binding events occur with sufficiently unequal probability. If these conditions are met then the steady-state growth rate is in general a non-monotonic function of the thermodynamic driving force for crystal growth, which is the characteristic of poisoning. Finally, our results also indicate that relatively small changes of system parameters could be used to induce recovery from poisoning.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Inst. of Health (NIH) (United States); National Science Foundation (NSF)
- Grant/Contract Number:
- AC02-05CH11231; R01GM107487; CNS-1006860; EPS-1006860; EPS-0919443
- OSTI ID:
- 1379091
- Alternate ID(s):
- OSTI ID: 1237770
- Journal Information:
- Journal of Chemical Physics, Vol. 144, Issue 6; ISSN 0021-9606
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Catalystlike role of impurities in speeding layer-by-layer growth
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journal | October 2019 |
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