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Title: Dopant Activation in Sn-Doped Ga2O3 Investigated by X-Ray Absorption Spectroscopy

Authors:
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Publication Date:
OSTI Identifier:
1236765
Report Number(s):
NREL/JA-5K00-65774
Journal ID: ISSN 0003-6951
DOE Contract Number:
AC36-08GO28308
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 25; Related Information: Applied Physics Letters
Publisher:
American Institute of Physics (AIP)
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE atomic layer deposition; doping; pulsed laser deposition; x-ray absorption near edge structure; x-ray absorption spectroscopy