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Title: High-mobility BaSnO 3 grown by oxide molecular beam epitaxy

High-mobility perovskite BaSnO 3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO 3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO x. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO 3. We demonstrate room temperature electron mobilities of 150 cm 2 V -1 s -1 in films grown on PrScO 3. Lastly, the results open up a wide range of opportunities for future electronic devices.
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Univ. of California, Santa Barbara, CA (United States)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
FG02-02ER45994; DEFG02-02ER45994
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 1; Journal ID: ISSN 2166-532X
American Institute of Physics (AIP)
Research Org:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org:
Country of Publication:
United States
42 ENGINEERING; molecular beam epitaxy; dielectric oxides; reflection high energy electron diffraction; carrier mobility; epitaxy