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Title: Insight into the epitaxial growth of high optical quality GaAs1–xBix

Abstract

The ternary alloy GaAs1–xBix is a potentially important material for infrared light emitting devices, but its use has been limited by poor optical quality. We report on the synthesis of GaAs1–xBix epi-layers that exhibit narrow, band edge photoluminescence similar to other ternary GaAs based alloys, e.g., InyGa1–yAs. The measured spectral linewidths are as low as 14 meV and 37 meV at low temperature (6 K) and room temperature, respectively, and are less than half of previously reported values. The improved optical quality is attributed to the use of incident UV irradiation of the epitaxial surface and the presence of a partial surface coverage of bismuth in a surfactant layer during epitaxy. Comparisons of samples grown under illuminated and dark conditions provide insight into possible surface processes that may be altered by the incident UV light. Here, the improved optical quality now opens up possibilities for the practical use of GaAs1–xBix in optoelectronic devices.

Authors:
 [1];  [1];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1236040
Alternate Identifier(s):
OSTI ID: 1420689
Report Number(s):
NREL/JA-5K00-64989
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 23; Related Information: Journal of Applied Physics; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; bismuth; III-V semiconductors; surfactants; photoluminescence; desorption; solar cells; surface and interface chemistry; optoelectronic devices; ultraviolet light; optoelectronic applications; X-ray diffraction; electron diffraction; epitaxy; multiphase flows; photoluminescence spectroscopy

Citation Formats

Beaton, Daniel A., Mascarenhas, Angelo, and Alberi, Kirstin. Insight into the epitaxial growth of high optical quality GaAs1–xBix. United States: N. p., 2015. Web. doi:10.1063/1.4937574.
Beaton, Daniel A., Mascarenhas, Angelo, & Alberi, Kirstin. Insight into the epitaxial growth of high optical quality GaAs1–xBix. United States. https://doi.org/10.1063/1.4937574
Beaton, Daniel A., Mascarenhas, Angelo, and Alberi, Kirstin. 2015. "Insight into the epitaxial growth of high optical quality GaAs1–xBix". United States. https://doi.org/10.1063/1.4937574. https://www.osti.gov/servlets/purl/1236040.
@article{osti_1236040,
title = {Insight into the epitaxial growth of high optical quality GaAs1–xBix},
author = {Beaton, Daniel A. and Mascarenhas, Angelo and Alberi, Kirstin},
abstractNote = {The ternary alloy GaAs1–xBix is a potentially important material for infrared light emitting devices, but its use has been limited by poor optical quality. We report on the synthesis of GaAs1–xBix epi-layers that exhibit narrow, band edge photoluminescence similar to other ternary GaAs based alloys, e.g., InyGa1–yAs. The measured spectral linewidths are as low as 14 meV and 37 meV at low temperature (6 K) and room temperature, respectively, and are less than half of previously reported values. The improved optical quality is attributed to the use of incident UV irradiation of the epitaxial surface and the presence of a partial surface coverage of bismuth in a surfactant layer during epitaxy. Comparisons of samples grown under illuminated and dark conditions provide insight into possible surface processes that may be altered by the incident UV light. Here, the improved optical quality now opens up possibilities for the practical use of GaAs1–xBix in optoelectronic devices.},
doi = {10.1063/1.4937574},
url = {https://www.osti.gov/biblio/1236040}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 23,
volume = 118,
place = {United States},
year = {Wed Dec 16 00:00:00 EST 2015},
month = {Wed Dec 16 00:00:00 EST 2015}
}

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Cited by: 14 works
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Works referenced in this record:

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  • Johnson, S. R.; Sadofyev, Yu. G.; Ding, D.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue 3
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Works referencing / citing this record:

Effects of excess carriers on charged defect concentrations in wide bandgap semiconductors
journal, May 2018


Optical properties of GaAs 1−x Bi x /GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates
journal, November 2018


Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys
journal, May 2020


Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application
journal, February 2017