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Title: Tunnel Oxide Passivated Contacts Formed by Ion Implantation for Applications in Silicon Solar Cells

Authors:
; ; ; ; ; ; ; ;
Publication Date:
OSTI Identifier:
1235415
Report Number(s):
NREL/JA-5J00-65649
Journal ID: ISSN 0021-8979
DOE Contract Number:
AC36-08GO28308
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 20; Related Information: Journal of Applied Physics
Publisher:
American Institute of Physics (AIP)
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE SunShot Program to Advance Solar Cell Efficiency II (FPACE)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE amorphous semiconductors; passivation; ion implantation; silicon doping; silicon solar cells