Intensity- and temperature- dependent carrier recombination in InAs/In(As1-xSbx) type-II superlattices

Olson, Benjamin Varberg; Kadlec, Emil Andrew; Kim, Jin K.; Klem, John F.; Hawkins, Samuel D.; Shaner, Eric A.; Flatte, Michael E.

doi:10.1103/PhysRevApplied.3.044010

Title: Intensity- and temperature- dependent carrier recombination in InAs/In(As_1-xSb_x) type-II superlattices

Journal Article · Fri Apr 17 00:00:00 EDT 2015 · Physical Review Applied

DOI:https://doi.org/10.1103/PhysRevApplied.3.044010· OSTI ID:1235266

Olson, Benjamin Varberg ^[1]; Kadlec, Emil Andrew ^[1]; Kim, Jin K. ^[1]; Klem, John F. ^[1]; Hawkins, Samuel D. ^[1]; Shaner, Eric A. ^[1]; Flatte, Michael E. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of Iowa, Iowa City, IA (United States)

Our time-resolved measurements for carrier recombination are reported as a midwave infrared InAs/InAs_0.66Sb_0.34 type-II superlattice (T2SL) function of pump intensity and sample temperature. By including the T2SL doping level in the analysis, the Shockley-Read-Hall (SRH), radiative, and Auger recombination components of the carrier lifetime are uniquely distinguished at each temperature. SRH is the limiting recombination mechanism for excess carrier densities less than the doping level (the low-injection regime) and temperatures less than 175 K. A SRH defect energy of 95 meV, either below the T2SL conduction-band edge or above the T2SL valence-band edge, is identified. Auger recombination limits the carrier lifetimes for excess carrier densities greater than the doping level (the high-injection regime) for all temperatures tested. Additionally, at temperatures greater than 225 K, Auger recombination also limits the low-injection carrier lifetime due to the onset of the intrinsic temperature range and large intrinsic carrier densities. Radiative recombination is found to not have a significant contribution to the total lifetime for all temperatures and injection regimes, with the data implying a photon recycling factor of 15. Using the measured lifetime data, diffusion currents are calculated and compared to calculated Hg_1-xCd_xTe dark current, indicating that the T2SL can have a lower dark current with mitigation of the SRH defect states. Our results illustrate the potential for InAs/InAs_1-xSb_x T2SLs as absorbers in infrared photodetectors.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1235266

Report Number(s):: SAND-2015-0613J; 562489

Journal Information:: Physical Review Applied, Vol. 03, Issue 04; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 49 works

Citation information provided by
Web of Science

References (52)

Fundamental physics of infrared detector materials Kinch, Michael A. Journal of Electronic Materials, Vol. 29, Issue 6 https://doi.org/10.1007/s11664-000-0229-7	journal	June 2000
Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe Rhiger, David R. Journal of Electronic Materials, Vol. 40, Issue 8 https://doi.org/10.1007/s11664-011-1653-6	journal	May 2011
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice Olson, B. V.; Shaner, E. A.; Kim, J. K. Applied Physics Letters, Vol. 101, Issue 9 https://doi.org/10.1063/1.4749842	journal	August 2012
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb Steenbergen, E. H.; Connelly, B. C.; Metcalfe, G. D. Applied Physics Letters, Vol. 99, Issue 25 https://doi.org/10.1063/1.3671398	journal	December 2011
Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices Höglund, L.; Ting, D. Z.; Khoshakhlagh, A. Applied Physics Letters, Vol. 103, Issue 22 https://doi.org/10.1063/1.4835055	journal	November 2013
Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials Donetsky, Dmitry; Belenky, Gregory; Svensson, Stefan Applied Physics Letters, Vol. 97, Issue 5 https://doi.org/10.1063/1.3476352	journal	August 2010
Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence Connelly, Blair C.; Metcalfe, Grace D.; Shen, Hongen Applied Physics Letters, Vol. 97, Issue 25 https://doi.org/10.1063/1.3529458	journal	December 2010
Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices Murray, L. M.; Lokovic, K. S.; Olson, B. V. Journal of Crystal Growth, Vol. 386 https://doi.org/10.1016/j.jcrysgro.2013.10.014	journal	January 2014
Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures Donetsky, Dmitry; Svensson, Stefan P.; Vorobjev, Leonid E. Applied Physics Letters, Vol. 95, Issue 21 https://doi.org/10.1063/1.3267103	journal	November 2009
Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control Zuo, Daniel; Qiao, Pengfei; Wasserman, Daniel Applied Physics Letters, Vol. 102, Issue 14 https://doi.org/10.1063/1.4801764	journal	April 2013
Carrier recombination lifetime characterization of molecular beam epitaxially grown HgCdTe Chang, Y.; Grein, C. H.; Zhao, J. Applied Physics Letters, Vol. 93, Issue 19 https://doi.org/10.1063/1.3001935	journal	November 2008
A high-performance long wavelength superlattice complementary barrier infrared detector Ting, David Z. -Y.; Hill, Cory J.; Soibel, Alexander Applied Physics Letters, Vol. 95, Issue 2 https://doi.org/10.1063/1.3177333	journal	July 2009
High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection Hoang, A. M.; Chen, G.; Chevallier, R. Applied Physics Letters, Vol. 104, Issue 25 https://doi.org/10.1063/1.4884947	journal	June 2014
Long-Wave InAs/GaSb Superlattice Detectors Based on nBn and Pin Designs Khoshakhlagh, Arezou; Myers, Stephen IEEE Journal of Quantum Electronics, Vol. 46, Issue 6 https://doi.org/10.1109/JQE.2010.2041635	journal	June 2010
Antimonide Type-II “W” Photodiodes with Long-Wave Infrared R 0 A Comparable to HgCdTe Canedy, C. L.; Aifer, E. H.; Vurgaftman, I. Journal of Electronic Materials, Vol. 36, Issue 8 https://doi.org/10.1007/s11664-007-0109-5	journal	June 2007
Strained and Unstrained Layer Superlattices for Infrared Detection Grein, C. H.; Garland, J.; Flatté, M. E. Journal of Electronic Materials, Vol. 38, Issue 8 https://doi.org/10.1007/s11664-009-0757-8	journal	March 2009
Minority carrier lifetimes in ideal InGaSb/InAs superlattices Grein, C. H.; Young, P. M.; Ehrenreich, H. Applied Physics Letters, Vol. 61, Issue 24 https://doi.org/10.1063/1.108480	journal	December 1992
Theory and modeling of type-II strained-layer superlattice detectors Flatté, Michael E.; Grein, Christoph H. SPIE OPTO: Integrated Optoelectronic Devices, SPIE Proceedings https://doi.org/10.1117/12.814173	conference	January 2009
Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization Svensson, S. P.; Donetsky, D.; Wang, D. Journal of Crystal Growth, Vol. 334, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.08.030	journal	November 2011
Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence Connelly, Blair C.; Metcalfe, Grace D.; Shen, Hongen Journal of Electronic Materials, Vol. 42, Issue 11 https://doi.org/10.1007/s11664-013-2759-9	journal	September 2013
Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics Sah, Chih-tang; Noyce, Robert; Shockley, William Proceedings of the IRE, Vol. 45, Issue 9 https://doi.org/10.1109/JRPROC.1957.278528	journal	September 1957
Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys Olson, B. V.; Shaner, E. A.; Kim, J. K. Applied Physics Letters, Vol. 103, Issue 5 https://doi.org/10.1063/1.4817400	journal	July 2013
Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells Hwang, Jinyoung; Lee, Kyusang; Teran, Alan Physical Review Applied, Vol. 1, Issue 5 https://doi.org/10.1103/PhysRevApplied.1.051003	journal	June 2014
Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice Jang, D. -J.; Flatté, Michael E.; Grein, C. H. Physical Review B, Vol. 58, Issue 19 https://doi.org/10.1103/PhysRevB.58.13047	journal	November 1998
Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors Lang, D. V. Journal of Applied Physics, Vol. 45, Issue 7 https://doi.org/10.1063/1.1663719	journal	July 1974
Characterization of multiple deep level systems in semiconductor junctions by admittance measurements Beguwala, M.; Crowell, C. R. Solid-State Electronics, Vol. 17, Issue 2 https://doi.org/10.1016/0038-1101(74)90068-9	journal	February 1974
Below bandgap optical absorption in tellurium-doped GaSb Chandola, A.; Pino, R.; Dutta, P. S. Semiconductor Science and Technology, Vol. 20, Issue 8 https://doi.org/10.1088/0268-1242/20/8/046	journal	July 2005
The study of charge carrier kinetics in semiconductors by microwave conductivity measurements Kunst, M.; Beck, G. Journal of Applied Physics, Vol. 60, Issue 10 https://doi.org/10.1063/1.337612	journal	November 1986
Intensity‐dependent minority‐carrier lifetime in III‐V semiconductors due to saturation of recombination centers Ahrenkiel, R. K.; Keyes, B. M.; Dunlavy, D. J. Journal of Applied Physics, Vol. 70, Issue 1 https://doi.org/10.1063/1.350315	journal	July 1991
Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice Klein, Brianna; Gautam, Nutan; Plis, Elena Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 2 https://doi.org/10.1116/1.4862085	journal	March 2014
Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices Aytac, Y.; Olson, B. V.; Kim, J. K. Applied Physics Letters, Vol. 105, Issue 2 https://doi.org/10.1063/1.4890578	journal	July 2014
Recombination processes in semiconductors Hall, R. N. Proceedings of the IEE - Part B: Electronic and Communication Engineering, Vol. 106, Issue 17S https://doi.org/10.1049/pi-b-2.1959.0171	journal	May 1959
Quantum efficiency in InSb Beattie, Alan R. Journal of Physics and Chemistry of Solids, Vol. 23, Issue 8 https://doi.org/10.1016/0022-3697(62)90122-1	journal	August 1962
Auger lifetime in InAs, InAsSb, and InAsSb‐InAlAsSb quantum wells Lindle, J. R.; Meyer, J. R.; Hoffman, C. A. Applied Physics Letters, Vol. 67, Issue 21 https://doi.org/10.1063/1.115146	journal	November 1995
Carrier recombination rates in narrow-gap ${I n A s / G a}_{1 - x} {In}_{x} Sb$ -based superlattices Flatté, Michael E.; Grein, C. H.; Hasenberg, T. C. Physical Review B, Vol. 59, Issue 8 https://doi.org/10.1103/PhysRevB.59.5745	journal	February 1999
Auger recombination in narrow-gap semiconductor superlattices incorporating antimony Grein, C. H.; Flatté, M. E.; Olesberg, J. T. Journal of Applied Physics, Vol. 92, Issue 12 https://doi.org/10.1063/1.1521255	journal	December 2002
Measurement of the Auger recombination rate in p -type 0.54 eV GaInAsSb by time-resolved photoluminescence Anikeev, S.; Donetsky, D.; Belenky, G. Applied Physics Letters, Vol. 83, Issue 16 https://doi.org/10.1063/1.1621455	journal	October 2003
Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes Grein, C. H.; Young, P. M.; Flatté, M. E. Journal of Applied Physics, Vol. 78, Issue 12 https://doi.org/10.1063/1.360422	journal	December 1995
Auger recombination dynamics of Hg0.795Cd0.205Te in the high excitation regime Ciesla, C. M.; Murdin, B. N.; Phillips, T. J. Applied Physics Letters, Vol. 71, Issue 4 https://doi.org/10.1063/1.119588	journal	July 1997
Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy Fang, Z. M.; Ma, K. Y.; Jaw, D. H. Journal of Applied Physics, Vol. 67, Issue 11 https://doi.org/10.1063/1.345050	journal	June 1990
Design of Phosphorus-Containing MWIR Type-II Superlattices for Infrared Photon Detectors Grein, C. H.; Flatte, M. E.; Evans, A. J. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 19, Issue 5 https://doi.org/10.1109/JSTQE.2012.2222358	journal	September 2013
Auger lifetime enhancement in InAs–Ga _{1− x} In _x Sb superlattices Youngdale, E. R.; Meyer, J. R.; Hoffman, C. A. Applied Physics Letters, Vol. 64, Issue 23 https://doi.org/10.1063/1.111325	journal	June 1994
Semiconductors: Data Handbook Madelung, Otfried https://doi.org/10.1007/978-3-642-18865-7	book	January 2004
Radiative lifetime in semiconductors for infrared detection Humphreys, R. G. Infrared Physics, Vol. 23, Issue 3 https://doi.org/10.1016/0020-0891(83)90031-3	journal	May 1983
Radiative lifetime in semiconductors for infrared detection Humphreys, R. G. Infrared Physics, Vol. 26, Issue 6 https://doi.org/10.1016/0020-0891(86)90054-0	journal	November 1986
Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms Höglund, L.; Ting, D. Z.; Soibel, A. Applied Physics Letters, Vol. 105, Issue 19 https://doi.org/10.1063/1.4902022	journal	November 2014
Interpreting mid-wave infrared MWIR HgCdTe photodetectors Tennant, W. E. Progress in Quantum Electronics, Vol. 36, Issue 2-3 https://doi.org/10.1016/j.pquantelec.2012.05.001	journal	March 2012
Energy gap versus alloy composition and temperature in Hg _{1− x} Cd _x Te Hansen, G. L.; Schmit, J. L.; Casselman, T. N. Journal of Applied Physics, Vol. 53, Issue 10 https://doi.org/10.1063/1.330018	journal	October 1982
Semiconductors: Data Handbook Henini, M. Microelectronics Journal, Vol. 35, Issue 8 https://doi.org/10.1016/j.mejo.2004.04.001	journal	August 2004
Auger effect in semiconductors Landsberg, P. T.; Beattie, A. R. Journal of Physics and Chemistry of Solids, Vol. 8 https://doi.org/10.1016/0022-3697(59)90276-8	journal	January 1959
Energy gap versus alloy composition and temperature in Hg ₁ _{− x} Cd _x Te Chu, Junhao; Xu, Shichou; Tang, Dingyuan Applied Physics Letters, Vol. 43, Issue 11 https://doi.org/10.1063/1.94237	journal	December 1983
Auger Effect in Semiconductors Pincherle, L. Proceedings of the Physical Society. Section B, Vol. 68, Issue 5 https://doi.org/10.1088/0370-1301/68/5/108	journal	May 1955

Cited By (3)

Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors Rhiger, David R.; Smith, Edward P. Journal of Electronic Materials, Vol. 48, Issue 10 https://doi.org/10.1007/s11664-019-07319-y	journal	June 2019
Enhancement of radiation tolerance in GaAs/AlGaAs core–shell and InP nanowires Li, Fajun; Xie, Xiaolong; Gao, Qian Nanotechnology, Vol. 29, Issue 22 https://doi.org/10.1088/1361-6528/aab009	journal	April 2018
Photo-excited carrier relaxation dynamics in two-dimensional InSe flakes Li, Ying; Ye, Jialiang; Yuan, Kai Nanotechnology, Vol. 31, Issue 9 https://doi.org/10.1088/1361-6528/ab5835	journal	December 2019

Similar Records

Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Journal Article · Tue Sep 22 00:00:00 EDT 2015 · Journal of Applied Physics · OSTI ID:1235266

Aytac, Yigit; Olson, Benjamin Varberg; Kim, Jin K.; +5 more

Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices

Journal Article · Mon Sep 28 00:00:00 EDT 2015 · Journal of Applied Physics · OSTI ID:1235266

Flatté, M. E.; Boggess, T. F.; Olson, B. V.; +4 more

Effects of electron doping level on minority carrier lifetimes in n -type mid-wave infrared InAs/InAs1−xSbx type-II superlattices

Journal Article · Wed Dec 28 00:00:00 EST 2016 · Applied Physics Letters · OSTI ID:1235266

Kadlec, E. A.; Olson, B. V.; Goldflam, M. D.; +9 more

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY

Title: Intensity- and temperature- dependent carrier recombination in InAs/In(As1-xSbx) type-II superlattices

Citation Formats

References (52)

Cited By (3)

Similar Records

Related Subjects

Title: Intensity- and temperature- dependent carrier recombination in InAs/In(As_1-xSb_x) type-II superlattices