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Title: Interband Tunneling for Hole Injection in III-Nitride Ultraviolet Emitters

Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al0.3Ga0.7N interband tunnel junctions with a lowresistance of 5.6 × 10-4 Ω cm2 were obtained and integrated on ultraviolet light emitting diodes.Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-type Al0.3Ga0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm2 at a current density of 120 A/cm2 with a forward voltage of 5.9 V was achieved. Our demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [2] ;  [1] ;  [1]
  1. The Ohio State Univ., Columbus, OH (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
1235262
Report Number(s):
SAND2015--3693J
Journal ID: ISSN 0003-6951; 583782
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 14
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY