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Title: THz Generation Mechanisms in the Semiconductor alloy, GaAs1-x Bix

Authors:
; ;
Publication Date:
OSTI Identifier:
1233462
Report Number(s):
NREL/JA-5K00-65580
Journal ID: ISSN 0021-8979
DOE Contract Number:
AC36-08GO28308
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 16; Related Information: Journal of Applied Physics
Publisher:
American Institute of Physics (AIP)
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS III-V semiconductors; band gap; field emitters; rectification; semiconductor growth