Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001)

Comes, Ryan B.; Xu, Peng; Jalan, Bharat; Chambers, Scott A.

doi:10.1063/1.4932063

Title: Band alignment of epitaxial SrTiO₃ thin films with (LaAlO₃)_0.3-(Sr₂AlTaO₆)_0.7 (001)

Journal Article · Mon Sep 28 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4932063· OSTI ID:1229940

Comes, Ryan B. ^[1]; Xu, Peng ^[2]; Jalan, Bharat ^[2]; Chambers, Scott A. ^[1]

Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Univ. of Minnesota, Minneapolis, MN (United States)

SrTiO₃ (STO) epitaxial thin films and heterostructures are of considerable interest due to the wide range of functionalities they exhibit. The alloy perovskite (LaAlO₃)_0.3-(Sr₂AlTaO₆)_0.7 (LSAT) is commonly used as a substrate for these material structures due to its structural compatibility. However, surprisingly little is known about the electronic properties of the STO/LSAT interface despite its potentially important role in affecting the overall electronic structure of system. We examine the band alignment of STO/LSAT heterostructures using x-ray photoelectron spectroscopy for epitaxial STO films deposited using two different molecular beam epitaxy approaches. Here, we find that the valence band offset ranges from +0.2(1) eV to -0.2(1) eV depending on surface conditions for the film and substrate. From these results we extract a conduction band offset from -2.4(1) eV to -2.8(1) eV, indicating that the conduction band edge is more deeply bound in STO and that LSAT will not act as a sink or trap for electrons in the supported film or multilayer.

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Research Organization:: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States). Environmental Molecular Sciences Laboratory (EMSL)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-76RL01830; 10122

OSTI ID:: 1229940

Alternate ID(s):: OSTI ID: 1229681

Report Number(s):: PNNL-SA-111633; APPLAB; 48341; KC0203020

Journal Information:: Applied Physics Letters, Vol. 107, Issue 13; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 19 works

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Energy Level Alignment and Cation Charge States at the LaFeO ₃ /LaMnO ₃ (001) Heterointerface Smolin, Sergey Y.; Choquette, Amber K.; Wilks, Regan G. Advanced Materials Interfaces, Vol. 4, Issue 14 https://doi.org/10.1002/admi.201700183	journal	April 2017
Spectral identification scheme for epitaxially grown single-phase niobium dioxide Hadamek, Tobias; Posadas, Agham B.; Dhamdhere, Ajit Journal of Applied Physics, Vol. 119, Issue 9 https://doi.org/10.1063/1.4942834	journal	March 2016

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