Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content.

Paisley, Elizabeth A.; Brumbach, Michael T.; Allerman, Andrew A.; Atcitty, Stanley; Baca, Albert G.; Armstrong, Andrew M.; Kaplar, Robert J.; Ihlefeld, Jon F.

doi:10.1063/1.4930309

Title: Spectroscopic investigations of band offsets of MgO|Al_xGa_1-xN epitaxial heterostructures with varying AlN content.

Journal Article · Wed Sep 09 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930309· OSTI ID:1512899

Paisley, Elizabeth A. ^[1]; Brumbach, Michael T. ^[1]; Allerman, Andrew A. ^[1]; Atcitty, Stanley ^[1]; Baca, Albert G. ^[1]; Armstrong, Andrew M. ^[1]; Kaplar, Robert J. ^[1]; Ihlefeld, Jon F. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Epitaxial (111) Mg0 films were prepared on (0001) Al_xGa_1-xN via molecular-beam epitaxy for x=0 to x=0.67. Valence band offsets of Mg0 to Al_xGa_1-xN were measured using X-ray photoelectron spectroscopy as 1.65 ± 0.07 eV, 1.36 ± 0.05 eV, and1.05 ± 0.09 eV for x=0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75 eV, 2.39 eV, and 1.63 eV for x=0, 0.28, and 0.67, respectively. All band offsets measured between Mg0 and Al_xGa_1-xN provide a > 1 eV barrier height to the semiconductor.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1512899

Alternate ID(s):: OSTI ID: 1229658

Report Number(s):: SAND-2015-8002J; 665186

Journal Information:: Applied Physics Letters, Vol. 107, Issue 10; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 11 works

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References (27)

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy Craft, H. S.; Collazo, R.; Losego, M. D. Journal of Applied Physics, Vol. 102, Issue 7 https://doi.org/10.1063/1.2785022	journal	October 2007
Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys Allerman, A. A.; Crawford, M. H.; Fischer, A. J. Journal of Crystal Growth, Vol. 272, Issue 1-4, p. 227-241 https://doi.org/10.1016/j.jcrysgro.2004.08.035	journal	December 2004
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy Yang, A. L.; Song, H. P.; Liu, X. L. Applied Physics Letters, Vol. 94, Issue 5 https://doi.org/10.1063/1.3075060	journal	February 2009
Measurement of AlN/GaN (0001) heterojunction band offsets by x‐ray photoemission spectroscopy Waldrop, J. R.; Grant, R. W. Applied Physics Letters, Vol. 68, Issue 20 https://doi.org/10.1063/1.116355	journal	May 1996
Cubic inclusions in hexagonal AlN, GaN, and InN: Electronic states Belabbes, A.; de Carvalho, L. C.; Schleife, A. Physical Review B, Vol. 84, Issue 12 https://doi.org/10.1103/PhysRevB.84.125108	journal	September 2011
The band-gap bowing of AlxGa1−xN alloys Lee, S. R.; Wright, A. F.; Crawford, M. H. Applied Physics Letters, Vol. 74, Issue 22 https://doi.org/10.1063/1.123339	journal	May 1999
Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System Chen, J. -J.; Hlad, M.; Gerger, A. P. Journal of Electronic Materials, Vol. 36, Issue 4 https://doi.org/10.1007/s11664-006-0037-9	journal	December 2006
Determination of MgO∕GaN heterojunction band offsets by x-ray photoelectron spectroscopy Chen, J. -J.; Gila, B. P.; Hlad, M. Applied Physics Letters, Vol. 88, Issue 4 https://doi.org/10.1063/1.2170140	journal	January 2006
Band offsets of high K gate oxides on high mobility semiconductors Robertson, J.; Falabretti, B. Materials Science and Engineering: B, Vol. 135, Issue 3 https://doi.org/10.1016/j.mseb.2006.08.017	journal	December 2006
MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy Craft, H. S.; Ihlefeld, J. F.; Losego, M. D. Applied Physics Letters, Vol. 88, Issue 21 https://doi.org/10.1063/1.2201041	journal	May 2006
Epitaxial calcium oxide films deposited on gallium nitride surfaces Losego, Mark D.; Mita, Seiji; Collazo, Ramon Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, Issue 3 https://doi.org/10.1116/1.2710243	journal	January 2007
Smooth cubic commensurate oxides on gallium nitride Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M. Journal of Applied Physics, Vol. 115, Issue 6 https://doi.org/10.1063/1.4861172	journal	February 2014
Band offsets in the Sc2O3∕GaN heterojunction system Chen, J. -J.; Gila, B. P.; Hlad, M. Applied Physics Letters, Vol. 88, Issue 14 https://doi.org/10.1063/1.2194314	journal	April 2006
Schottky contact formation on polar and non-polar AlN Reddy, Pramod; Bryan, Isaac; Bryan, Zachary Journal of Applied Physics, Vol. 116, Issue 19 https://doi.org/10.1063/1.4901954	journal	November 2014
AlGaN composition dependence of the band offsets for epitaxial Gd ₂ O ₃ /Al _x Ga ₁₋ _x N (0 ≤ x ≤ 0.67) heterostructures Ihlefeld, Jon F.; Brumbach, Michael; Allerman, Andrew A. Applied Physics Letters, Vol. 105, Issue 1 https://doi.org/10.1063/1.4889883	journal	July 2014
Band offsets of La ₂ O ₃ on (0001) GaN grown by reactive molecular-beam epitaxy Ihlefeld, Jon F.; Brumbach, Michael; Atcitty, Stanley Applied Physics Letters, Vol. 102, Issue 16 https://doi.org/10.1063/1.4803091	journal	April 2013
Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations Schleife, A.; Fuchs, F.; Rödl, C. Applied Physics Letters, Vol. 94, Issue 1 https://doi.org/10.1063/1.3059569	journal	January 2009
Rutile films grown by molecular beam epitaxy on GaN and AlGaN∕GaN Hansen, P. J.; Vaithyanathan, V.; Wu, Y. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, Issue 2 https://doi.org/10.1116/1.1868672	journal	January 2005
Interface chemistry of metal‐GaAs Schottky‐barrier contacts Waldrop, J. R.; Grant, R. W. Applied Physics Letters, Vol. 34, Issue 10 https://doi.org/10.1063/1.90642	journal	May 1979
Band offset measurements of the Si3N4/GaN (0001) interface Cook, T. E.; Fulton, C. C.; Mecouch, W. J. Journal of Applied Physics, Vol. 94, Issue 6 https://doi.org/10.1063/1.1601314	journal	September 2003
Spectroscopic analysis of the epitaxial CaO (111)–GaN (0002) interface Craft, H. S.; Collazo, R.; Losego, M. D. Applied Physics Letters, Vol. 92, Issue 8 https://doi.org/10.1063/1.2887878	journal	February 2008
Band offsets, Schottky barrier heights, and their effects on electronic devices Robertson, John Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 5 https://doi.org/10.1116/1.4818426	journal	September 2013
Surface oxide relationships to band bending in GaN Garcia, Michael A.; Wolter, Scott D.; Kim, Tong-Ho Applied Physics Letters, Vol. 88, Issue 1 https://doi.org/10.1063/1.2158701	journal	January 2006
Formation and Schottky barrier height of metal contacts to β‐SiC Waldrop, J. R.; Grant, R. W. Applied Physics Letters, Vol. 56, Issue 6 https://doi.org/10.1063/1.102744	journal	February 1990
Surfactant assisted growth of MgO films on GaN Paisley, E. A.; Shelton, T. C.; Mita, S. Applied Physics Letters, Vol. 101, Issue 9 https://doi.org/10.1063/1.4748886	journal	August 2012
Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN Craft, H. S.; Rice, A. L.; Collazo, R. Applied Physics Letters, Vol. 98, Issue 8 https://doi.org/10.1063/1.3554762	journal	February 2011
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor Khan, M. A.; Hu, X.; Sumin, G. IEEE Electron Device Letters, Vol. 21, Issue 2 https://doi.org/10.1109/55.821668	journal	February 2000

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Energy band offsets of dielectrics on InGaZnO ₄ Hays, David C.; Gila, B. P.; Pearton, S. J. Applied Physics Reviews, Vol. 4, Issue 2 https://doi.org/10.1063/1.4980153	journal	June 2017
Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces Paisley, Elizabeth A.; Brumbach, Michael T.; Shelton, Christopher T. Applied Physics Letters, Vol. 112, Issue 9 https://doi.org/10.1063/1.5013605	journal	February 2018
Band alignments of sputtered dielectrics on GaN Supardan, S. N.; Das, P.; Major, J. D. Journal of Physics D: Applied Physics, Vol. 53, Issue 7 https://doi.org/10.1088/1361-6463/ab5995	journal	December 2019

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