Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

Greenlee, Jordan D.; Specht, Petra; Anderson, Travis J.; Koehler, Andrew D.; Weaver, Bradley D.; Luysberg, Martina; Dubon, Oscar D.; Kub, Francis J.; Weatherford, Todd R.; Hobart, Karl D.

doi:10.1063/1.4929583

Title: Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

Journal Article · Wed Aug 26 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4929583· OSTI ID:1229644

^[1]; Specht, Petra ^[2]; Anderson, Travis J. ^[1]; Koehler, Andrew D. ^[1]; Weaver, Bradley D. ^[1]; Luysberg, Martina ^[3]; Dubon, Oscar D. ^[2]; Kub, Francis J. ^[1]; Weatherford, Todd R. ^[4]; Hobart, Karl D. ^[1]

U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375, USA
University of California at Berkeley, Berkeley, California 94720, USA
ERC, Research Center Juelich GmbH, 52425 Juelich, Germany
Naval Postgraduate School, Monterey, California 93943, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1229644

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 107 Journal Issue: 8; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 30 works

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References (16)

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Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys Nam, K. B.; Nakarmi, M. L.; Lin, J. Y. Applied Physics Letters, Vol. 86, Issue 22, Article No. 222108 https://doi.org/10.1063/1.1943489	journal	May 2005
Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy White, B. D.; Bataiev, M.; Brillson, L. J. IEEE Transactions on Nuclear Science, Vol. 49, Issue 6 https://doi.org/10.1109/TNS.2002.805427	journal	December 2002
Electrical, spectral, and chemical properties of 1.8 mev proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence White, B. D.; Bataiev, M.; Goss, S. H. IEEE Transactions on Nuclear Science, Vol. 50, Issue 6 https://doi.org/10.1109/TNS.2003.821827	journal	December 2003
Simulation of Radiation Effects in AlGaN/GaN HEMTs Patrick, Erin E.; Choudhury, Mohua; Ren, Fan ECS Journal of Solid State Science and Technology, Vol. 4, Issue 3 https://doi.org/10.1149/2.0181503jss	journal	December 2014
dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors Luo, B.; Johnson, J. W.; Ren, F. Applied Physics Letters, Vol. 79, Issue 14 https://doi.org/10.1063/1.1408606	journal	October 2001
Radiation hardness of gallium nitride Ionascut-Nedelcescu, A.; Carlone, C.; Houdayer, A. IEEE Transactions on Nuclear Science, Vol. 49, Issue 6 https://doi.org/10.1109/TNS.2002.805363	journal	December 2002
High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors Luo, B.; Johnson, J. W.; Ren, F. Journal of Electronic Materials, Vol. 31, Issue 5 https://doi.org/10.1007/s11664-002-0097-4	journal	May 2002
Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation Anderson, Travis J.; Koehler, Andrew D.; Greenlee, Jordan D. IEEE Electron Device Letters, Vol. 35, Issue 8 https://doi.org/10.1109/LED.2014.2331001	journal	August 2014
Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films Tadjer, Marko J.; Anderson, Travis J.; Hobart, Karl D. IEEE Electron Device Letters, Vol. 33, Issue 1 https://doi.org/10.1109/LED.2011.2171031	journal	January 2012
GaN-Based RF Power Devices and Amplifiers Mishra, U. K.; Kazior, T. E. Proceedings of the IEEE, Vol. 96, Issue 2 https://doi.org/10.1109/JPROC.2007.911060	journal	February 2008
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Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs Kalavagunta, A.; Touboul, A.; Shen, L. IEEE Transactions on Nuclear Science, Vol. 55, Issue 4 https://doi.org/10.1109/TNS.2008.2001705	journal	August 2008

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