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This content will become publicly available on November 18, 2015

Title: Measuring single-shot, picosecond optical damage threshold in Ge, Si, and sapphire with a 5.1-μm laser

Optical photonic structures driven by picosecond, GW-class lasers are emerging as promising novel sources of electron beams and high quality X-rays. Due to quadratic dependence on wavelength of the laser ponderomotive potential, the performance of such sources scales very favorably towards longer drive laser wavelengths. However, to take full advantage of photonic structures at mid-IR spectral region, it is important to determine optical breakdown limits of common optical materials. To this end, an experimental study was carried out at a wavelength of 5 µm, using a frequency-doubled CO2 laser source, with 5 ps pulse length. Single-shot optical breakdowns were detected and characterized at different laser intensities, and damage threshold values of 0.2, 0.3, and 7.0 J/cm2, were established for Ge, Si, and sapphire, respectively. As a result, the measured damage threshold values were stable and repeatable within individual data sets, and across varying experimental conditions.
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  1. RadiaBeam Technologies, LLC, Santa Monica, CA (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Univ. of California, Los Angeles, CA (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 2159-3930; R&D Project: KBCH139; KB0202011
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Optical Materials Express
Additional Journal Information:
Journal Volume: 5; Journal Issue: 12; Journal ID: ISSN 2159-3930
Optical Society of America (OSA)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Nuclear Physics (NP) (SC-26)
Country of Publication:
United States