skip to main content

Title: Zr-induced Structural Changes in Hf1-xZrxO2 High-k Thin Films

The local symmetries around the Hf sites in thin films of Hf1-xZrxO2/Si(100) were probed using grazing incidence extended X-ray absorption fine-structure spectroscopy (EXAFS). The effects of the Zr incorporation on the local crystal symmetries were investigated using Hf L3 EXAFS at the Beamline X23A2 of the Brookhaven National Laboratory. The Zr ratios in the various films were set to between 0.0 and 1.0. Significant changes in the local environment were observed for x = 0.25 or greater values. For x = 0.0, the film local structure around Hf sites remain in the equilibrium monoclinic phase as referenced from our previous studies on HfO2 thin films on Si(100). When Zr is introduced, tetragonal symmetry around the Hf atom appears and becomes dominant at x = 0.63. Using the EXAFS theoretical simulations and non-linear least-square fit results, the fractions of the monoclinic versus tetragonal phases were identified in each film.
 [1] ;  [2] ;  [2] ;  [2] ;  [3] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Seton Hall Univ., South Orange, NJ (United States)
  2. SEMATECH, Austin, TX (United States)
  3. National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0947-8396
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics. A, Materials Science and Processing; Journal Volume: 117; Journal Issue: 1
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States